JPH0339832U - - Google Patents

Info

Publication number
JPH0339832U
JPH0339832U JP10086889U JP10086889U JPH0339832U JP H0339832 U JPH0339832 U JP H0339832U JP 10086889 U JP10086889 U JP 10086889U JP 10086889 U JP10086889 U JP 10086889U JP H0339832 U JPH0339832 U JP H0339832U
Authority
JP
Japan
Prior art keywords
gas
reaction chamber
flow rate
raw material
setting unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10086889U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10086889U priority Critical patent/JPH0339832U/ja
Publication of JPH0339832U publication Critical patent/JPH0339832U/ja
Pending legal-status Critical Current

Links

JP10086889U 1989-08-28 1989-08-28 Pending JPH0339832U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10086889U JPH0339832U (en]) 1989-08-28 1989-08-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10086889U JPH0339832U (en]) 1989-08-28 1989-08-28

Publications (1)

Publication Number Publication Date
JPH0339832U true JPH0339832U (en]) 1991-04-17

Family

ID=31649851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10086889U Pending JPH0339832U (en]) 1989-08-28 1989-08-28

Country Status (1)

Country Link
JP (1) JPH0339832U (en])

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898138A (ja) * 1981-12-07 1983-06-10 Hitachi Metals Ltd 減圧ｃｖｄ装置
JPS60211914A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd Ｃｖｄ装置
JPS61251119A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 化学気相成長方法
JPH01195277A (ja) * 1988-01-28 1989-08-07 Fujitsu Ltd 薄膜の形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898138A (ja) * 1981-12-07 1983-06-10 Hitachi Metals Ltd 減圧ｃｖｄ装置
JPS60211914A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd Ｃｖｄ装置
JPS61251119A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 化学気相成長方法
JPH01195277A (ja) * 1988-01-28 1989-08-07 Fujitsu Ltd 薄膜の形成方法

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